| 发明名称 | Programming memory cells | ||
| 摘要 | Methods for programming memory cells. One such method for programming memory cells includes generating an encoded stream using a data stream and programming the memory cells using the encoded stream to represent the data stream. A particular bit position of the encoded stream has a first voltage level when the particular bit position of the data stream has a particular logical state, and the particular bit position of the encoded stream has either a second voltage level or a third voltage level when the particular bit position of the data stream has a logical state other than the particular logical state. | ||
| 申请公布号 | US9030902(B2) | 申请公布日期 | 2015.05.12 |
| 申请号 | US201414330243 | 申请日期 | 2014.07.14 |
| 申请人 | Micron Technology, Inc. | 发明人 | Varanasi Chandra C. |
| 分类号 | G11C16/10;G11C7/10;G11C11/56;G11C16/04;G11C16/34 | 主分类号 | G11C16/10 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A method for programming memory cells, the method comprising: generating an encoded stream having three voltage levels using a data stream having only two logical states; and programming the memory cells using the encoded stream to represent the data stream, wherein a particular bit position of the encoded stream has a first voltage level when the particular bit position of the data stream has a particular logical state, and wherein the particular bit position of the encoded stream has either a second voltage level or a third voltage level when the particular bit position of the data stream has a logical state other than the particular logical state. | ||
| 地址 | Boise ID US | ||