Stacked layer type semiconductor device and semiconductor system including the same

摘要

A stacked layer type semiconductor device includes N memories each including at least one main via and (N−1) sub vias, the N memories being sequentially stacked on one-another so that central axes of the N memories face each other crosswise, and a plurality of connection units electrically connecting the N memories. Here, N is a natural number greater than 1.

主权项

1. A stacked layer type semiconductor device comprising:
a first memory comprising a first main via, a first sub via, and a first buffer electrically connected to the first main via and the first sub via; a second memory stacked on the first memory, and comprising a second main via electrically connected to the first main via, a second sub via electrically connected to the first sub via, and a second buffer electrically connected to the second main via and the second sub via; and a first selection circuit connected to the first main via of the first memory and the first buffer, a second selection circuit connected to the first sub via of the first memory and the first buffer, a third selection circuit connected to the second main via of the second memory and the second buffer, and a fourth selection circuit connected to the second sub via of the second memory and the second buffer, wherein the first, second, third, and fourth selection circuits are selectively activated to create a first path to the first buffer and a second path to the second buffer.