Ultraviolet light emitting device

摘要

Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

主权项

1. A light emitting device, comprising:
an active layer emitting light; and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side or upper parts of the light-transmitting layer has a surface-processed pattern portion, and wherein the pattern portion is disposed in a total internal reflection region, the total internal reflection region being defined as follows:(a+b12)⁢tan⁢⁢θTIR≺y≺h0≺x≺b1-a2-h⁢⁢tan⁢⁢θTIR,a+b12+h⁢⁢tan⁢⁢θTIR≺x≺b1 where ‘y’ represents a position of the light-transmittin layer in a thickness direction, ‘x’ represents a position of the light-transmitting layer in a width direction, ‘a’ represents a width of the active layer, b1 represents a width of the lower surface of the light-transmitting layer, θTIR represents a total internal reflection angle of the light-transmitting layer, and h represents a thickness of the light-transmitting layer.