Semiconductor light emitting device and method for manufacturing the same

摘要

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a reflection film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a bonding material. The bonding material integrates the fluorescent materials. The reflection film is partially provided on the fluorescent material layer and has a higher reflectance to the radiated light of the light emitting layer than to the radiated light of the fluorescent materials.

主权项

1. A semiconductor light emitting device comprising:
a semiconductor layer having a first surface and a second surface on an opposite side to the first surface and including a light emitting layer; a p-side electrode provided on the semiconductor layer; an n-side electrode provided on the semiconductor layer; a fluorescent material layer provided on a side of the first surface, the fluorescent material layer including a plurality of fluorescent materials and a bonding material, the fluorescent materials being excited by radiated light of the light emitting layer and emitting light of a different wavelength from the radiated light of the light emitting layer, the bonding material integrating the fluorescent materials and being transparent to the radiated light of the light emitting layer and radiated light of the fluorescent materials; and a reflection film provided on a portion of an upper surface of the fluorescent material layer, which is on a side of the fluorescent material layer opposite from the first surface, the reflection film having a higher reflectance to the radiated light of the light emitting layer than to the radiated light of the fluorescent materials; wherein the reflection film is not provided on another portion of the upper surface of the fluorescent material layer.