Solid-state imaging device and method for manufacturing the same

摘要

The present invention achieves an optical characteristic exhibiting excellent sensitivity or the like, by increasing the opening dimension of an optical waveguide without changing the interconnection layout, so that the optical waveguide can surely be filled with a film having high refractive index. Pixel portion A of a solid-state imaging device includes photodiode PD formed on a semiconductor substrate; a first insulating film including a concave portion above photodiode PD; and a second insulating film formed on the first insulating film such that the concave portion is filled with the second insulating film. Peripheral circuit portion B of the solid-state imaging device includes an internal interconnection formed in the first insulating film and a pad electrode formed on the internal interconnection to be electrically connected to the internal interconnection. The pad electrode is formed on the second insulating film.

主权项

1. A solid-state imaging device that is formed on a semiconductor substrate and that includes a pixel portion and a peripheral circuit portion, wherein
the pixel portion includes:
a photodiode that is formed on the semiconductor substrate;a first insulating film that is formed on the semiconductor substrate and that includes a concave portion above the photodiode; andan optical waveguide that is formed in the concave portion and that guides light to the photodiode, wherein the optical waveguide is structured with a second insulating film with which the concave portion is filled, and a portion of the second insulating film positioned on an outer side of the concave portion in the pixel portion is formed on the first insulating film and contacts the top face of the first insulating film, the peripheral circuit portion includes:
an interconnection that is formed in one of the first insulating film and an interlayer insulating film being an identical-level layer as the first insulating film;a pad portion that is formed on the interconnection and that is electrically connected to the interconnection; anda third insulating film that is formed on the first insulating film in the peripheral circuit portion, wherein the pad portion is formed on the third insulating film.