| 发明名称 | Method for treating SiOCH film with hydrogen plasma | ||
| 摘要 | A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light. | ||
| 申请公布号 | US9029272(B1) | 申请公布日期 | 2015.05.12 |
| 申请号 | US201314069244 | 申请日期 | 2013.10.31 |
| 申请人 | ASM IP Holding B.V. | 发明人 | Nakano Akinori;Ueda Shintaro;Ishikawa Dai;Matsushita Kiyohiro |
| 分类号 | H01L21/02 | 主分类号 | H01L21/02 |
| 代理机构 | Snell & Wilmer LLP | 代理人 | Snell & Wilmer LLP |
| 主权项 | 1. A method for forming a gap-fill SiOCH film on a patterned substrate, comprising: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and then (iv) curing the plasma-exposed SiOCH film with UV light emitted from a UV lamp. | ||
| 地址 | Almere NL | ||