Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts

摘要

Integrated circuits and methods for fabricating integrated circuits are provided herein. In an embodiment, a method for fabricating an integrated circuit includes forming over a semiconductor substrate a gate structure. The method further includes depositing a non-conformal spacer material around the gate structure. A protection mask is formed over the non-conformal spacer material. The method etches the non-conformal spacer material and protection mask to form a salicidation spacer. Further, a self-aligned silicide contact is formed adjacent the salicidation spacer.

主权项

1. A method for fabricating an integrated circuit comprising:
forming a gate structure overlying a semiconductor substrate; forming a conformal spacer around the gate structure; performing an ion implantation into the semiconductor substrate using the conformal spacer as a mask; removing the conformal spacer; after removing the conformal spacer, depositing a non-conformal spacer material around the gate structure; forming a protection mask over the non-conformal spacer material, wherein the non-conformal spacer material encapsulates the gate structure and prevents contact between the protection mask and the gate structure; etching the non-conformal spacer material and protection mask to form a salicidation spacer; and forming a self-aligned silicide contact adjacent the salicidation spacer.