| 发明名称 | On-chip poly-to-contact process monitoring and reliability evaluation system and method of use | ||
| 摘要 | An on-chip poly-to-contact process monitoring and reliability evaluation system and method of use are provided. A method includes determining a breakdown electrical field of each of one or more shallow trench isolation (STI) measurement structures corresponding to respective one or more original semiconductor structures. The method further includes determining a breakdown voltage of each of one or more substrate measurement structures corresponding to the respective one or more original semiconductor structures. The method further includes determining a space between a gate and a contact of each of the one or more original semiconductor structures based on the determined breakdown electrical field and the determined breakdown voltage. | ||
| 申请公布号 | US9029172(B2) | 申请公布日期 | 2015.05.12 |
| 申请号 | US201213354547 | 申请日期 | 2012.01.20 |
| 申请人 | International Business Machines Corporation | 发明人 | Chen Fen;Dufresne Roger A.;Sullivan Timothy D.;Wang Yanfeng |
| 分类号 | H01L21/00;H01L21/66 | 主分类号 | H01L21/00 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | Lestrange Michael;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A method comprising: determining a breakdown electrical field of each of one or more shallow trench isolation (STI) measurement structures corresponding to respective one or more original semiconductor structures; determining a breakdown voltage of each of one or more substrate measurement structures corresponding to the respective one or more original semiconductor structures; and determining a space between a gate and a contact of each of the one or more original semiconductor structures based on the determined breakdown electrical field and the determined breakdown voltage. | ||
| 地址 | Armonk NY US | ||