| 发明名称 | Semiconductor device and method for fabricating the same | ||
| 摘要 | A method for manufacturing a semiconductor device includes forming plural layers of a MTJ device, depositing a conductive layer over the plural layers, forming a hard mask pattern used for patterning the plural layers over the conductive layer, where the conductive layer is exposed through the hard mask pattern, performing hydrogen peroxide process to volatilize the exposed conductive layer and removing the volatilized conductive layer, and patterning the plural layers by using the hard mask pattern as an etch mask to form the MTJ device. | ||
| 申请公布号 | US9029964(B2) | 申请公布日期 | 2015.05.12 |
| 申请号 | US201213479670 | 申请日期 | 2012.05.24 |
| 申请人 | Hynix Semiconductor Inc. | 发明人 | Ha Ga Young;Park Ki Seon |
| 分类号 | H01L29/82;H01L43/08;H01L43/12;H01F41/30;B82Y40/00 | 主分类号 | H01L29/82 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method for manufacturing a semiconductor device, comprising: forming plural layers of a magnetic tunnel junction (MTJ) device; depositing a conductive layer over the plural layers; forming a hard mask pattern used for patterning the plural layers over the conductive layer, wherein the conductive layer is exposed through the hard mask pattern; performing hydrogen peroxide process to volatilize the exposed conductive layer and removing the volatilized conductive layer; and patterning the plural layers by using the hard mask pattern as an etch mask to form the MTJ device. | ||
| 地址 | Gyeonggi-do KR | ||