Self-bootstrapping field effect diode structures and methods

摘要

A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.

主权项

1. A semiconductor diode comprising:
first and second field-effect-gated current-conducting devices of opposite respective conductivity types, the first and second field-effect-gated current-conducting devices each comprising gates, sources, and drains, the first and second field-effect-gated current-conducting devices having respective sources thereof connected together, the second field-effect-gated current-conducting device further comprising a drift region and a semiconductor region formed within the drift region, the gate of the first field-effect-gated current-conducting device being connected to the semiconductor region of the drift region of the second field-effect-gated current-conducting device; said first and second field-effect-gated current-conducting devices each having respective drain terminals, the drain terminal of the first field-effect-gated current-conducting device being connected to a first external terminal of the semiconductor diode and the drain terminal of the second field-effect-gated current-conducting device being connected to a second external terminal of the semiconductor diode, the first and second external terminals to provide anode and cathode connections of the semiconductor diode, respectively; wherein the semiconductor diode has no external electrical connection other than the anode and cathode connections.