| 发明名称 | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films | ||
| 摘要 | A photonic device comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region. The device further includes a top diode material and an active diode region between the top and bottom diode materials. | ||
| 申请公布号 | US9029908(B2) | 申请公布日期 | 2015.05.12 |
| 申请号 | US201414288197 | 申请日期 | 2014.05.27 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lochtefeld Anthony J. |
| 分类号 | H01L33/20;H01L21/18;H01L29/15;H01L29/861;H01L31/18;H01L33/00;H01L33/12;H01L21/02;H01L29/04;H01L29/88;H01L33/52 | 主分类号 | H01L33/20 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A device comprising: a bottom diode region comprising a first semiconductor material in a single film structure, wherein the bottom diode region has one or more coalescence regions; a top diode region comprising a second semiconductor material; an active diode region interposed between the top diode region and the bottom diode region; a handler substrate disposed on the top diode region; and a contact disposed on the bottom diode region. | ||
| 地址 | Hsin-Chu TW | ||