Semiconductor apparatus having nitride semiconductor buffer layer doped with at least one of Fe, Si, and C

摘要

A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of AlGaN and doped with Fe, the buffer layer includes a plurality of layers having different Al component ratios from each other, and the Al component ratio of a first layer is greater than the Al component ratio of a second layer and a Fe concentration of the first layer is less than the Fe concentration of the second layer, the first and second layers being included in the plurality of layers, and the first layer being formed on a substrate side of the second layer.

主权项

1. A semiconductor apparatus comprising:
a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; a second semiconductor layer formed on the first semiconductor layer; and a gate electrode, a source electrode, and a drain electrode formed on the second semiconductor layer, wherein the buffer layer is formed of AlGaN and doped with Fe, wherein the buffer layer includes a plurality of layers having different Al component ratios from each other, and wherein, when a first layer of the layers is closer to the substrate than a second layer of the layers and the second layer is closer to the first semiconductor layer than the first layer, the Al component ratio of the first layer is greater than the Al component ratio of the second layer and the Fe concentration of the first layer is less than the Fe concentration of the second layer.