发明名称 |
Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates |
摘要 |
A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of the n-type layers is a compositionally graded n-type group III nitride, and at least one of the p-type layers is a compositionally graded p-type group III nitride. A first ohmic contact for injecting current is formed on the substrate, and a second ohmic contact is formed on a surface of at least one of the p-type layers. Utilizing the disclosed structure and methods, a device capable of emitting light over a wide spectrum may be made without the use of phosphor materials. |
申请公布号 |
US9029867(B2) |
申请公布日期 |
2015.05.12 |
申请号 |
US201213541836 |
申请日期 |
2012.07.05 |
申请人 |
RoseStreet Labs Energy, LLC |
发明人 |
Walukiewicz Wladyslaw;Gherasoiu Iulian;Reichertz Lothar A. |
分类号 |
H01L33/00;H01L29/778 |
主分类号 |
H01L33/00 |
代理机构 |
Greenberg Traurig, LLP |
代理人 |
Greenberg Traurig, LLP |
主权项 |
1. A light emitting device capable of emitting light, comprising:
a substrate; a plurality of n-type layers, each comprising a group III nitride alloy, wherein said plurality of n-type layers comprise at least one layer of n-type graded group III nitride; a plurality of p-type layers, each comprising a group III nitride alloy, wherein said plurality of p-type layers comprise at least one layer of p-type graded group III nitride; a first ohmic contact for injecting current formed on the substrate; and a second ohmic contact formed on a surface of at least one of the p-type layers. |
地址 |
Phoenix AZ US |