Semiconductor device and method for manufacturing the same

摘要

A variation in electrical characteristics, such as a negative shift of the threshold voltage or an increase in S value, of a fin-type transistor including an oxide semiconductor material is prevented. An oxide semiconductor film is sandwiched between a plurality of gate electrodes with an insulating film provided between the oxide semiconductor film and each of the gate electrodes. Specifically, a first gate insulating film is provided to cover a first gate electrode, an oxide semiconductor film is provided to be in contact with the first gate insulating film and extend beyond the first gate electrode, a second gate insulating film is provided to cover at least the oxide semiconductor film, and a second gate electrode is provided to be in contact with part of the second gate insulating film and extend beyond the first gate electrode.

主权项

1. A semiconductor device comprising:
a first gate electrode over a surface of a substrate, the first gate electrode extending in a first direction parallel to the surface of the substrate; a first gate insulating film covering a top surface and side surfaces of the first gate electrode; an oxide semiconductor film covering the first gate electrode with the first gate insulating film interposed between the top surface of the first gate electrode and the oxide semiconductor film and between the side surfaces of the first gate electrode and the oxide semiconductor film; a second gate insulating film covering the oxide semiconductor film; and a second gate electrode over the second gate insulating film, the second gate electrode extending in a second direction parallel to the surface of the substrate, wherein the second direction is substantially perpendicular to the first direction.