Memory and manufacturing method thereof

摘要

A memory comprises a substrate, a plurality of bit line stacks of alternate semiconductor layers and first insulating layers, a memory layer, a plurality of second insulating layers, and a plurality of string select structures. The bit line stacks are disposed over the substrates and arranged in parallel. Each of the bit line stacks has two opposite sidewalls. The memory layer is disposed on the sidewalls of the bit line stacks. The second insulating layers are disposed on the bit line stacks, respectively. The string select structures are disposed correspondingly to the bit line stacks. Each of the string select structures comprises a first conductive layer and two liners, the semiconductor layer is disposed on a corresponding second insulating layer, and the two liners are disposed respectively along the two opposite sidewalls of a corresponding bit line stack and connected the first conductive layer.

主权项

1. A manufacturing method of a memory, comprising:
providing a substrate with a stack of alternate semiconductor layers and first insulating layers thereover; forming a second insulating layer on the stack; forming a first conductive layer on the second insulating layer; patterning the first conductive layer, the second insulating layer and the stack to form a plurality of bit line stacks, a plurality of second insulating layers corresponding to the bit line stacks, and a plurality of first conductive layers corresponding to the bit line stacks; forming a memory layer, the memory layer covering the bit line stacks; removing parts of the memory layer to expose the first conductive layers; and forming a plurality of liners respectively along sidewalls of the bit line stacks, such that the liners are connected with the first conductive layers to form a plurality of string select structures.