发明名称 Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
摘要 Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device, which perform a cleaning process on the inside of an exhaust buffer chamber even if gases are exhausted using the exhaust buffer chamber. The substrate processing apparatus includes a processing space to process a substrate on a substrate placing surface, a gas supply system to supply gases into the processing space through a side facing the substrate placing surface, an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole, a gas exhaust system configured to exhaust the gases supplied into the exhaust buffer chamber, and a cleaning gas supply pipe configured to supply a cleaning gas into the exhaust buffer chamber.
申请公布号 US9028648(B1) 申请公布日期 2015.05.12
申请号 US201414493828 申请日期 2014.09.23
申请人 Hitachi Kokusai Electric Inc. 发明人 Kamakura Tsukasa;Kameda Kenji
分类号 C23C16/44;C23C16/458;C23C16/52;H01L21/00;H01L21/02 主分类号 C23C16/44
代理机构 Volpe and Koenig, P.C. 代理人 Volpe and Koenig, P.C.
主权项 1. A substrate processing apparatus comprising: a processing space configured to process a substrate placed on a substrate placing surface; a gas supply system configured to supply gases into the processing space through a side facing the substrate placing surface; an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole; a gas exhaust system configured to exhaust the gases supplied into the exhaust buffer chamber; and a cleaning gas supply pipe configured to supply a cleaning gas into the exhaust buffer chamber through a connection point installed between the communication hole and the gas flow blocking wall.
地址 Tokyo JP