Power transistor device with super junction

摘要

The present invention provides a power transistor device with a super junction including a substrate, a first epitaxial layer, a second epitaxial layer, and a third epitaxial layer. The first epitaxial layer is disposed on the substrate, and has a plurality of trenches. The trenches are filled up with the second epitaxial layer, and a top surface of the second epitaxial layer is higher than a top surface of the first epitaxial layer. The second epitaxial layer has a plurality of through holes penetrating through the second epitaxial layer and disposed on the first epitaxial layer. The second epitaxial layer and the first epitaxial layer have different conductivity types. The through holes are filled up with the third epitaxial layer, and the third epitaxial layer is in contact with the first epitaxial layer. The third epitaxial layer and the first epitaxial layer have the same conductivity type.

主权项

1. A power transistor device with a super junction, comprising:
a substrate having a first conductivity type; a first epitaxial layer disposed on the substrate and having a plurality of trenches; a second epitaxial layer filling up the trenches and a top surface of the second epitaxial layer is higher than a top surface of the first epitaxial layer, wherein the second epitaxial layer has a plurality of through holes penetrating through the second epitaxial layer and disposed on the first epitaxial layer, and the second epitaxial layer and the first epitaxial layer have different conductivity type; and a third epitaxial layer filling up the through holes and in contact with the first epitaxial layer, wherein the third epitaxial layer and the first epitaxial layer have the same conductivity type, wherein the first epitaxial layer and the third epitaxial layer have different doping concentrations, and the first epitaxial layer and the third epitaxial layer have different widths in a direction parallel to a top surface of the substrate.