Plasma doping apparatus and plasma doping method

摘要

Disclosed is a plasma doping apparatus provided with a plasma generating mechanism. The plasma generating mechanism includes a microwave generator that generates microwave for plasma excitation, a dielectric window that transmits the microwave generated by the microwave generator into a processing container, and a radial line slot antenna formed with a plurality of slots. The radial line slot antenna radiates the microwave to the dielectric window. A control unit controls the plasma doping apparatus such that a doping gas and a gas for plasma excitation are supplied into the processing container by a gas supply unit in a state where the substrate is placed on a holding unit, and then plasma is generated by the plasma generating mechanism to perform doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2.

主权项

1. A plasma doping method of performing doping by implanting a dopant into a substrate to be processed, the method comprising:
holding the substrate on a holding unit disposed within a processing container; supplying a doping gas and a gas for plasma excitation into the processing container; and performing doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2 by generating plasma within the processing container by using a microwave generator configured to generate microwave for plasma excitation within the processing container, a dielectric window configured to transmit the microwave generated by the microwave generator into the processing container, and a radial line slot antenna formed with a plurality of slots and configured to radiate the microwave to the dielectric window.