High-K layers, transistors, and fabrication method

摘要

A method is provided for fabricating a High-K layer. The method includes providing a substrate, applying a first precursor gas on the substrate such that the substrate absorbs first precursor gas molecules in a chemical absorption process, and removing the unabsorbed first precursor gas using a first inert gas. The method also includes applying a second precursor gas on the substrate, and forming a first thin film on the substrate as a reaction product of the second precursor gas and the absorbed first precursor gas molecules. Further, the method includes removing unreacted second precursor gas and byproducts using a second inert gas, and forming a high-K layer on the substrate by forming a plurality of the first thin films layer-by-layer.

主权项

1. A method for fabricating a semiconductor device with a high-K layer, comprising:
providing a substrate; forming NH4OH gas by using an inert gas having a gas flow of approximately 1 sccm-100 sccm to dilute a mixture of NH3 and H2O vapor, such that NH3 reacts with H2O vapor to form the NH4OH gas; passing an inert gas through a solution containing a first precursor comprising a first precursor molecule of the NH4OH gas to produce a first precursor gas comprising first precursor gas molecules volatilized and carried along with the inert gas to prepare a uniform transfer of the first precursor gas onto the substrate subsequently; transferring the first precursor gas onto the substrate such that the substrate absorbs the first precursor gas molecules by a chemical absorption process to spread individual first precursor gas molecules on a surface of the substrate; removing the unabsorbed first precursor gas using a first inert gas; after transferring the first precursor gas and removing the unabsorbed first precursor gas, applying a second precursor gas on the substrate; forming a first thin film on the substrate as a reaction product of the second precursor gas and the absorbed first precursor gas molecules; removing unreacted second precursor gas and byproducts using a second inert gas; and forming a high-K layer on the substrate by forming a plurality of the first thin films layer-by-layer.