Adjusting program and erase voltages in a memory device

摘要

A system and apparatus for adjusting threshold program and erase voltages in a memory array, such as a floating gate memory array, for example. One such method includes applying a first voltage level to a first edge word line of a memory block string and applying a second voltage level to a second edge word line of the memory block string. Such a method might also include applying a third voltage level to non-edge word lines of the memory block string.

主权项

1. A memory array comprising:
a first select gate; a first edge cell arranged directly adjacent to and not in contact with the first select gate; a second select gate; and a second edge cell arranged directly adjacent to the second select gate, wherein during an erase operation, the first edge cell is configured to receive a first erase voltage and the second edge cell is configured to receive a second erase voltage different from the first erase voltage.