发明名称 Light emitting device for AC power operation
摘要 Disclosed is an improved light-emitting device for an AC power operation. A conventional light emitting device employs an AC light-emitting diode having arrays of light emitting cells connected in reverse parallel. The arrays in the prior art alternately repeat on/off in response to a phase change of an AC power source, resulting in short light emission time during a ½ cycle and the occurrence of a flicker effect. An AC light-emitting device according to the present invention employs a variety of means by which light emission time is prolonged during a ½ cycle in response to a phase change of an AC power source and a flicker effect can be reduced. For example, the means may be switching blocks respectively connected to nodes between the light emitting cells, switching blocks connected to a plurality of arrays, or a delay phosphor. Further, there is provided an AC light-emitting device, wherein a plurality of arrays having the different numbers of light emitting cells are employed to increase light emission time and to reduce a flicker effect.
申请公布号 US9030110(B2) 申请公布日期 2015.05.12
申请号 US201012837805 申请日期 2010.07.16
申请人 Seoul Viosys Co., Ltd. 发明人 Lee Chung Hoon;Speck James S.;Kim Hong San;Kim Jae Jo;Kim Sung Han;Lee Jae Ho
分类号 H05B37/00;H05B33/08;H05B33/02;H01L27/15 主分类号 H05B37/00
代理机构 H.C. Park & Associates, PLC 代理人 H.C. Park & Associates, PLC
主权项 1. A light-emitting device, comprising: a first power source connection terminal and a second power source connection terminal; and a plurality of first arrays of GaN-based light emitting cells, each first array comprising a plurality of serially connected light emitting cells, the first arrays being connected in parallel to one another between the first power source connection terminal and the second power source connection terminal, and each first array being configured to emit light under a different voltage level from the other first arrays, wherein the GaN-based light emitting cells are monolithically formed on a substrate, and wherein an N-type semiconductor layer of one light emitting cell is electrically connected to a P-type semiconductor layer of an adjacent light emitting cell.
地址 Ansan-si KR