Interconnect structures comprising flexible buffer layers

摘要

A structure includes a substrate, a low-k dielectric layer over the substrate, and a conductive barrier layer extending into the low-k dielectric layer. The conductive barrier layer includes a sidewall portion. A metal line in the low-k dielectric layer adjoins the conductive barrier layer. An organic buffer layer is between the sidewall portion of the conductive barrier layer and the low-k dielectric layer.

主权项

1. A structure comprising:
a substrate; a first metal line over the substrate; a low-k dielectric layer over the first metal line; a conductive barrier layer extending into the low-k dielectric layer, wherein the conductive barrier layer comprises a sidewall portion, and a bottom portion underlying and connected to the sidewall portion, and wherein a portion of the conductive barrier layer comprises a bottom surface in contact with a top surface of the first metal line; a second metal line adjoining the conductive barrier layer and in the low-k dielectric layer; and an organic buffer layer comprising:
a first portion between the sidewall portion of the conductive barrier layer and the low-k dielectric layer; anda second portion underlying and in contact with the bottom portion of the conductive barrier layer.