Semiconductor device and method of manufacture thereof

摘要

A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line. The redistribution line in the first pad area is arranged orthogonal to a first direction to a neutral point of the semiconductor device.

主权项

1. A semiconductor device comprising:
a redistribution layer disposed on a chip, the redistribution layer comprising a first redistribution line; an isolation layer disposed on the redistribution layer, the isolation layer having a first opening forming a first pad area; and a first interconnect located in the first opening and in contact with the first redistribution line, wherein the first redistribution line in the first pad area is routed orthogonal to a first direction to a central point and not routed parallel to an edge of the semiconductor device, and wherein the central point is a central point in a plane parallel to a main surface of the semiconductor device.