FinFETs and the methods for forming the same

摘要

A method includes forming a gate stack including a gate electrode on a first semiconductor fin. The gate electrode includes a portion over and aligned to a middle portion of the first semiconductor fin. A second semiconductor fin is on a side of the gate electrode, and does not extend to under the gate electrode. The first and the second semiconductor fins are spaced apart from, and parallel to, each other. An end portion of the first semiconductor fin and the second semiconductor fin are etched. An epitaxy is performed to form an epitaxy region, which includes a first portion extending into a first space left by the etched first end portion of the first semiconductor fin, and a second portion extending into a second space left by the etched second semiconductor fin. A first source/drain region is formed in the epitaxy region.

主权项

1. A device comprising:
a semiconductor substrate having a plurality of semiconductor strips extending therefrom, the plurality of semiconductor strips being parallel to each other; a dielectric layer over the substrate between adjacent ones of the semiconductor strips, the dielectric layer extending to an upper surface of the semiconductor strips; a semiconductor fin extending from a middle portion of a first strip of the plurality of semiconductor strips; a gate electrode over the semiconductor fin and on sidewalls of the semiconductor fin, the gate electrode extending over a top surface of the dielectric layer; a first source/drain region on a first side of the gate electrode, the first source/drain region extending over and contacting the first strip and another strip of the plurality of semiconductor strips; a second source/drain region on a second side of the gate electrode, the second source/drain region extending over and contacting the first strip and the another strip of the plurality of semiconductor strips; and a channel region over the first strip extending between the first source/drain region and the second source/drain region, wherein no channel region extends over the another strip.