Semiconductor device and manufacturing method therefor

摘要

A semiconductor device according to the present invention has an n-type MIS transistor. The n-type MIS transistor has a first active region surrounded by a device isolation region in a semiconductor substrate, a first gate insulating film having a first high-dielectric-constant insulating film containing a first metal for adjustment, and a first electrode formed on the first gate insulating film. A protrusion amount of one end of the first high-dielectric-constant insulating film on the first device isolation part is smaller than a protrusion amount of an end of the first gate electrode above the first device isolation part.

主权项

1. A semiconductor device comprising an n-type MIS transistor,
wherein the n-type MIS transistor includes
a first active region surrounded by a device isolation region in a semiconductor substrate,a first gate insulating film formed on the first active region and the device isolation region, and having a first high-dielectric-constant insulating film containing a first metal for adjustment, anda first gate electrode formed on the first gate insulating film, the first high-dielectric-constant insulating film has one end protruding on a first device isolation part in the device isolation region adjacent to one end in a gate width direction of the first active region, and one side face in the gate width direction of the first high-dielectric-constant insulating film is positioned on the first device isolation part, the first gate electrode has an end protruding above the first device isolation part, and a protrusion amount of the one end of the first high-dielectric-constant insulating film on the first device isolation part is smaller than a protrusion amount of the end of the first gate electrode above the first device isolation part.