Substrate processing apparatus and method of manufacturing semiconductor device

摘要

Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber. The substrate processing apparatus includes a load lock chamber configured to accommodate stacked substrates; a first transfer mechanism having a first transfer arm provided with a first end effector, and configured to transfer the substrates into/from the load lock chamber at a first side of the load lock chamber; a second transfer mechanism having a second transfer arm provided with a second end effector, and configured to transfer the substrates into/from the load lock chamber at a second side of the load lock chamber; a barrier installed between the substrates to be spaced apart from the substrates supported by a substrate support provided in the load lock chamber; and an auxiliary barrier unit installed between the substrate support and the barrier, wherein the auxiliary barrier unit is installed at places other than standby spaces of the end effectors.

主权项

1. A substrate processing apparatus comprising:
a load lock chamber configured to accommodate a substrate support supporting stacked substrates including at least a first substrate and a second substrate; a first transfer mechanism having a first transfer arm provided with a first end effector having two fingers at a front end thereof, and configured to transfer the stacked substrates into/from the load lock chamber at a first side of the load lock chamber; a second transfer mechanism having a second transfer arm provided with a second end effector having two fingers at a front end thereof, and configured to transfer the stacked substrates into/from the load lock chamber at a second side of the load lock chamber; a barrier installed between the stacked substrates supported by the substrate support provided in the load lock chamber, the barrier being spaced apart from each of the stacked substrates; and an auxiliary barrier unit disposed between the barrier and one of the stacked substrates without vertically overlapping the substrate support and a standby space of the first end effector, the auxiliary barrier unit being disposed about a center portion of the one of the stacked substrates supported by the substrate support and configured to absorb heat radiated from the one of the stacked substrates, wherein the auxiliary barrier unit has a blackened surface to increase absorption of heat, and the barrier has therein a channel where a cooling medium flows and is configured to absorb heat of the auxiliary barrier unit absorbing radiant heat radiated from the stacked substrates.