DEPOSITION APPARATUS

摘要

A deposition apparatus according to an embodiment of the present invention comprises: a substrate support which supports a substrate; a reaction chamber wall which defines a reaction chamber while remaining in contact with the substrate support; a plurality of gas inlets which are connected to the reaction chamber wall; a remote plasma unit which is connected to at least one of the gas inlets; and a gas movement tube which is connected to the gas inlets and defines a reaction area together with the substrate support. A plurality of gas which passed through the gas inlets flow along the gas movement tube and are directly supplied on the substrate without contacting other devices.