发明名称 LIGHT EMITTING DIODE STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a light emitting diode structure.SOLUTION: A light emitting diode structure comprises a first type semiconductor layer, a luminescent layer, a second type semiconductor layer, a plurality of first light extraction improving structures and a transparent conductive layer. The luminescent layer is provided in a part of the first type semiconductor layer. The second type semiconductor layer is provided on the luminescent layer and has a refraction index of n1. The first light extraction improving structures are provided on the second type semiconductor layer and has a refractive index of n2. The plurality of first light extraction improving structures are partitioned from each other and each has at least one light emission inclined plane inclined with respect to a top surface of the second type semiconductor layer. The transparent conductive layer conformably covers the first light extraction improving structures and the second type semiconductor layer and has a refractive index of n3 where n2>n3.
申请公布号 JP2015090975(A) 申请公布日期 2015.05.11
申请号 JP20130266643 申请日期 2013.12.25
申请人 LEXTAR ELECTRONICS CORP 发明人 HSU WEN-CHIEH;SAI SORYO
分类号 H01L33/22;H01L33/42;H01L33/44 主分类号 H01L33/22
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