| 摘要 |
The present invention relates to a semiconductor device which includes a trench MOS transistor equipped with at least two electrodes inside a trench formed on a semiconductor substrate. Regarding the semiconductor device, a part of the shield electrode located in a lower part of the trench is formed into a large thickness, and the part of the shield electrode protrudes toward a surface of the semiconductor device and connects to a source power as a groove is formed on a gate electrode stacked on the shield electrode. Through this, provided is an effect of removing a region where a high step is generated and a region of degrading Igss (gate/source or gate/drain leakage current) of a trench MOS transistor by minimizing an overlap region between the shield and the gate electrode. |
