发明名称 DEVICE AND METHOD FOR GENERATING METAL TO INSULATOR TRANSITION
摘要 A method for manufacturing a device for generating metal-insulator transition according to an embodiment of the present invention comprises: a step of preparing a substrate; a step of soaking the substrate in an aqueous solution including Au ion and Fluoride; and a step of forming a gold nanostructure on the substrate. The step of soaking the substrate in the aqueous solution includes a step of having a surface rate of the gold nanostructure become 45%-87%.
申请公布号 KR20150050898(A) 申请公布日期 2015.05.11
申请号 KR20130132124 申请日期 2013.11.01
申请人 PUKYONG NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION 发明人 JANG, JAE WON;LEE, SEUNG HOON
分类号 H01L21/208 主分类号 H01L21/208
代理机构 代理人
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