发明名称 |
DEVICE AND METHOD FOR GENERATING METAL TO INSULATOR TRANSITION |
摘要 |
A method for manufacturing a device for generating metal-insulator transition according to an embodiment of the present invention comprises: a step of preparing a substrate; a step of soaking the substrate in an aqueous solution including Au ion and Fluoride; and a step of forming a gold nanostructure on the substrate. The step of soaking the substrate in the aqueous solution includes a step of having a surface rate of the gold nanostructure become 45%-87%. |
申请公布号 |
KR20150050898(A) |
申请公布日期 |
2015.05.11 |
申请号 |
KR20130132124 |
申请日期 |
2013.11.01 |
申请人 |
PUKYONG NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION |
发明人 |
JANG, JAE WON;LEE, SEUNG HOON |
分类号 |
H01L21/208 |
主分类号 |
H01L21/208 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|