| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a group III nitride single crystal excellent in light permeability, by a sublimation recrystallization method to curb an effect of surrounding oxygen.SOLUTION: A manufacturing apparatus of a group III nitride single crystal by a sublimation recrystallization method includes a crucible 10 to hold a raw material 3, a crystal growth furnace 40 to house the crucible 10, an insulation container 20 that is disposed in the crystal growth furnace 40 and contains the crucible 10, and an oxygen getter 30 that is disposed in the crystal growth furnace 40 and absorbs oxygen. The oxygen getter 30 is at least made of zirconia, and at least one kind of material selected from the group consisting of calcium oxide, magnesium oxide, yttrium oxide, strontium oxide, and barium oxide. The oxygen getter 30 efficiently excludes oxygen generated in the crucible 10 from the crucible 10, and thus a group III nitride excellent in light permeability, especially an aluminum nitride (AlN) single crystal 2 is manufactured.</p> |
