化合物半导体装置及其制造方法,申请号TW101125536-传众专利搜索

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发明名称	化合物半导体装置及其制造方法
摘要
申请公布号	TWI484632	申请公布日期	2015.05.11
申请号	TW101125536	申请日期	2012.07.16
申请人	富士通股份有限公司	发明人	小谷淳二;石黑哲郎;苫米地秀一
分类号	H01L29/778;H01L21/205	主分类号	H01L29/778
代理机构		代理人	恽轶群台北市松山区南京东路3段248号7楼;陈文郎台北市松山区南京东路3段248号7楼
主权项	一种化合物半导体装置，包含：一基材；一GaN化合物半导体多层结构，其设置在该基材上；及一应力释放层，其系以AlN为主且设置在该基材与该GaN化合物半导体多层结构之间，其中与该GaN化合物半导体多层结构接触之该应力释放层之一表面具有多数凹部，且该等凹部具有一5nm以上之深度且系以一2×1010cm-2以上之数量密度形成。
地址	日本

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