发明名称 CONTROLLED FORMATION OF DISLOCATIONS IN MONOCRYSTALLINE SYNTHETIC DIAMOND MATERIAL
摘要 FIELD: chemistry.SUBSTANCE: invention relates to production of monocrystalline diamond material by chemical vapour deposition (CVD), which is used in optical, mechanical, fluorescent and/or electronic devices. A diamond layer contains a mesh of nonparallel intercrossing dislocations as seen on an X-ray topographic sectional image or in conditions of a fluorescent technique, wherein the layer has thickness equal to or greater than 1 mcm; the mesh of nonparallel dislocations stretches across a volume which is at least 30% of the total volume of the diamond layer, and wherein the mesh of nonparallel dislocations contains a first set of dislocations propagating in a first direction through the diamond layer, and a second set of dislocations propagating in a second direction through the diamond layer, wherein the angle between the first and second directions is in the range of 40° to 100°, as seen on an X-ray topographic sectional image or in conditions of a fluorescent technique.EFFECT: invention enables to control the type and/or direction of dislocations in a diamond material without affecting optical and/or electronic properties of devices based on said material and optimise said properties for a specific application.12 cl, 8 dwg, 2 tbl, 3 ex
申请公布号 RU2550197(C2) 申请公布日期 2015.05.10
申请号 RU20130132978 申请日期 2011.12.16
申请人 EHLEMENT SIKS LIMITED 发明人 DILLON KHARPRIT KAUR;DEHVIS NIKOLAS MEHTT'JU;KHAN RIZVAN UDDIN AKHMAD;TVITCHEN DEHNIEHL DZHEJMS;MARTIN'JU FILIP MORIS
分类号 C30B25/20;A44C17/00;C30B29/04;H01L31/036 主分类号 C30B25/20
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