THE MANUFACTURING METHOD OF SIC SINGLE CRYSTAL USING THE CRUCIBLE COATED WITH SIC

摘要

The present invention relates to a manufacturing method of a silicon carbide single crystal using a crucible coated with silicon carbide, more specifically, to a manufacturing method of a silicon carbide single crystal using a graphite crucible coated with silicon carbide, wherein a silicon carbide coated layer is at least 500 μm, and the silicon carbide has purity of 99.9% or more in a beta crystal phase. According to the present invention regarding the growth of the silicon carbide single crystal using a method of liquid-phase growth, high-grade silicon carbide single crystals can be prepared by controlling defects such as carbon impregnation or the like in a finally grown silicon carbide by preventing the separation of dust in a silicon melt solution from the graphite crucible, and the silicon carbide single crystal can be grown since coated silicon carbide in a beta phase has high solubility with respect to liquid silicon.