发明名称 MTJ DEVICE MANUFACTURING METHOD
摘要 A manufacturing method of magnetic tunnel junction (MTJ) device according to an embodiment of the present invention includes a first magnetic layer, a second magnetic layer, and a tunnel insulation layer between the first and second magnetic layers. The method encompasses a process to form a tunnel insulation layer upon the first magnetic layer and a process to heat an object including the first magnetic layer and the tunnel insulation layer through microwave heating or inductive heating method.
申请公布号 KR20150050375(A) 申请公布日期 2015.05.08
申请号 KR20140140554 申请日期 2014.10.17
申请人 TOKYO ELECTRON LIMITED 发明人 KOJIMA YASUHIKO;FURUKAWA SHINJI;KITADA TOORU;TANAKA YOSHITSUGU;SUZUKI YUUSUKE
分类号 H01L43/08;H01L43/12 主分类号 H01L43/08
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