发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus capable of inhibiting deterioration of the product quality which is caused by adhesion of foreign objects, and to provide a charged particle beam lithography method.SOLUTION: A charged particle beam lithography apparatus 1 includes: a lithography chamber 2 which houses a stage 2a supporting a sample W that is a lithography object; a robot chamber 4 which houses a robot device 4a for transporting the sample W onto the stage 2a; and an electrification member 41 which is provided along a transport path A1 of the sample W and attracts foreign objects adhering to the sample W passing through the transport path A1 by static electricity.</p>
申请公布号 JP2015088680(A) 申请公布日期 2015.05.07
申请号 JP20130227842 申请日期 2013.11.01
申请人 NUFLARE TECHNOLOGY INC 发明人 KUROHORI KENJI
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
代理机构 代理人
主权项
地址