发明名称 |
METHODS AND APPARATUSES HAVING STRINGS OF MEMORY CELLS INCLUDING A METAL SOURCE |
摘要 |
Methods for forming a string of memory cells, an apparatus having a string of memory cells, and a system are disclosed. A method for forming the string of memory cells comprises forming a metal silicide source material over a substrate. The metal silicide source material is doped. A vertical string of memory cells is formed over the metal silicide source material. A semiconductor material is formed vertically and adjacent to the vertical string of memory cells and coupled to the metal silicide source material. |
申请公布号 |
WO2015066447(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
WO2014US63377 |
申请日期 |
2014.10.31 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LU, ZHENYU;LINDSAY, ROGER W.;BICKSLER, ANDREW;HU, YONGJUN JEFF;LIU, HAITAO |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|