发明名称 |
FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM |
摘要 |
A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element. |
申请公布号 |
WO2015064670(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
WO2014JP78842 |
申请日期 |
2014.10.23 |
申请人 |
RICOH COMPANY, LTD.;SAOTOME, RYOICHI;UEDA, NAOYUKI;NAKAMURA, YUKI;ABE, YUKIKO;MATSUMOTO, SHINJI;SONE, YUJI;ARAE, SADANORI |
发明人 |
SAOTOME, RYOICHI;UEDA, NAOYUKI;NAKAMURA, YUKI;ABE, YUKIKO;MATSUMOTO, SHINJI;SONE, YUJI;ARAE, SADANORI |
分类号 |
H01L21/336;G02F1/1368;H01L29/786;H01L51/50 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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