SEMICONDUCTOR-SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR-DEVICE MANUFACTURING METHOD IN WHICH GERMANIUM LAYER IS HEAT-TREATED

摘要

A semiconductor-substrate manufacturing method that includes a step in which a germanium layer (30) having an oxygen concentration of at least 1×1016 cm-3 is heat-treated at a temperature of at least 700°C in a reductive gas atmosphere. Also, a semiconductor-substrate manufacturing method that includes a step in which a germanium layer (30) having an oxygen concentration of at least 1×1016 cm-3 is heat-treated in a reductive gas atmosphere such that said oxygen concentration decreases.