发明名称 |
ZENER DIODE |
摘要 |
A Zener diode (10) includes a semiconductor substrate (12), an anode electrode (40) and a cathode electrode (42). The semiconductor substrate (12) includes a p-type anode region (20), an n-type current path region (22) and a drift region (24). The p-type anode region (20) is connected to the anode electrode (40). The n-type current path region (22) is in contact with the anode region (20). The drift region (24) is in contact with the anode region (20) and the current path region (22). The drift region (24) is of an n type. The drift region (24) has a lower n-type impurity concentration than the current path region (22). The drift region (24) is connected to the cathode electrode (42) directly or via another n-type region (26). |
申请公布号 |
WO2015063574(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
WO2014IB02269 |
申请日期 |
2014.10.30 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
EGUCHI, HIROOMI;KINPARA, HIROMICHI;OKAWA, TAKASHI;IKEDA, SATOSHI |
分类号 |
H01L29/866;H01L29/06;H01L29/36 |
主分类号 |
H01L29/866 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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