METHOD FOR REMOVING SACRIFICIAL FILM, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for removing a sacrificial film and a substrate processing apparatus which enable the uniform removal of a sacrificial film from a surface of a substrate while suppressing or preventing the collapse of a pattern.SOLUTION: A method for removing a sacrificial film from a surface of a wafer where cylinders and the sacrificial film embedded between the cylinders are formed comprises: a sacrificial film pre-etching step S35 of removing the sacrificial film to a halfway depth by supplying an etchant to the wafer surface; a second rinse step S36 of rinsing off a residue attaching to the wafer surface by supplying a rinse liquid to the wafer surface; a dry step S37 of removing a liquid component on the wafer surface therefrom; and a dry etching step S39 of removing the sacrificial film remaining on the wafer surface by supplying an etching gas to the wafer surface.