| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a multi-valued magnetic memory element obtained by multi-value conversion of a magnetoresistive element, and accordingly achieving higher capacity, and a magnetic memory device.SOLUTION: A multi-valued magnetic memory element comprises a magnetoresistive element including a magnetization fixed layer, an intermediate layer and a magnetization free layer, as a memory unit. At least one of the magnetization free layer and the magnetization fixed layer has a layered structure having a degree of freedom of magnetization arrangement. The magnetoresistive element has a plurality of degenerated minor loops of a magnetic field-resistance curve, and has two resistive state. For example, the magnetoresistive element has four combinations of a first resistive sate before the application of at least one of among a predetermined current, magnetic field and voltage and a second state after the application in a low resistive state and a high resistive state.</p> |
