| 摘要 |
<p>A hetero-junction field effect transistor is formed by a GaN layer (1) and AlGaN layer (2) stacked in this order on a substrate, and a gate electrode, source electrode, and drain electrode formed on the substrate, the hetero-junction field effect transistor being formed on the active region of the AlGaN layer (2). A drain electrode pad (31), comprising a bonding-capable region (31a) which is formed upon the AlGaN layer (2) outside the active region of the hetero-junction field effect transistor with an insulator film (30) interposed therebetween, is connected to the drain electrode. A gate electrode extension part (14), which is connected to the gate electrode, is formed on the AlGaN layer (2) and between the source electrode and the bonding-capable region (31a) of the drain electrode pad (31). Provided is a semiconductor device with which it is possible to improve resilience to pressure between a source electrode, and a bonding-capable region of a drain electrode pad which is formed on an insulator film without an interlayer insulator film, without increasing the element size.</p> |
