发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.
申请公布号 US2015126044(A1) 申请公布日期 2015.05.07
申请号 US201414522711 申请日期 2014.10.24
申请人 Tokyo Electron Limited 发明人 KATO Hitoshi;KIKUCHI Hiroyuki;YONEZAWA Masato;SATO Jun;MIURA Shigehiro
分类号 C23C16/50;H01L21/02;C23C16/505;H01J37/32;C23C16/458;C23C16/455 主分类号 C23C16/50
代理机构 代理人
主权项 1. A substrate processing apparatus, comprising: a vacuum chamber including a top plate; a rotary table rotatably disposed in the vacuum chamber and including a substrate mounting area on which a substrate is to be placed, the substrate mounting area being formed on a surface of the rotary table that faces the top plate; a first process gas supply part that is disposed between the top plate and the rotary table and supplies a first process gas to be adsorbed on a surface of the substrate; a plasma processing gas supply part that is disposed between the top plate and the rotary table apart from the first process gas supply part in a circumferential direction of the rotary table, and supplies a second process gas to the surface of the substrate; a separation gas supply part that is disposed between the top plate and the rotary table and between the first process gas supply part and the plasma processing gas supply part, and supplies a separation gas for separating the first process gas and the second process gas; a plasma generator that converts the second process gas into plasma; and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.
地址 Tokyo JP