| 发明名称 |
METHOD FOR FORMING ELECTRODE OF N-TYPE NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF |
| 摘要 |
According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element. |
| 申请公布号 |
US2015126022(A1) |
申请公布日期 |
2015.05.07 |
| 申请号 |
US201414336082 |
申请日期 |
2014.07.21 |
| 申请人 |
KIM Tae Hun;KIM Sung Joon;SUNG Young Kyu;LEE Wan Ho;JANG Tae Sung;PARK Tae Young;LIM Wan Tae |
发明人 |
KIM Tae Hun;KIM Sung Joon;SUNG Young Kyu;LEE Wan Ho;JANG Tae Sung;PARK Tae Young;LIM Wan Tae |
| 分类号 |
H01L21/223;H01L21/285 |
主分类号 |
H01L21/223 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming an electrode on an n-type nitride semiconductor, the method comprising:
forming a nitrogen vacancy surface layer by treating a surface of the n-type nitride semiconductor with inert gas plasma, the nitrogen vacancy surface layer lacking a nitrogen element; forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma; and forming the electrode on the oxygen-added nitride film. |
| 地址 |
Anysang-si KR |
