发明名称 |
METHOD OF MANUFACTURING A MOS TYPE SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a MOS type semiconductor device, includes, before forming a semiconductor functional structure including a necessary MOS gate structure on one principal surface of a silicon semiconductor substrate, in the order recited, a first step of heating the silicon semiconductor substrate in an oxygen-containing atmosphere under heat treatment conditions including a heat treatment temperature of higher than 1,280° C. and a heat treatment time necessary for introducing oxygen up to a solid solution limit concentration in the silicon semiconductor substrate as a whole body; and a second step of holding the silicon semiconductor substrate at a specified temperature in a range from 1,000° C. to 1,200° C. The method achieves small turn-off loss and little variation of ON voltages without controlling a collector layer to a lower concentration than the conventional technology. |
申请公布号 |
US2015126000(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
US201414512377 |
申请日期 |
2014.10.10 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
KAKEFU Mitsuhiro |
分类号 |
H01L29/66;H01L29/16;H01L21/223;H01L21/324 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a MOS type semiconductor device, comprising, before forming a semiconductor functional structure including a necessary MOS gate structure on one principal surface of a silicon semiconductor substrate, in the order recited:
a first step of heating the silicon semiconductor substrate in an oxygen-containing atmosphere under heat treatment conditions including a heat treatment temperature of higher than 1,280° C. and a heat treatment time necessary for introducing oxygen up to a solid solution limit concentration in the silicon semiconductor substrate as a whole body; and a second step of holding the silicon semiconductor substrate at a specified temperature in a range from 1,000° C. to 1,200° C. |
地址 |
Kawasaki-shi JP |