发明名称 |
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES |
摘要 |
An electronic device includes a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the <0001> direction of between 0.15° and 0.65°. The electronic device also includes a first epitaxial layer coupled to the III-V substrate and a second epitaxial layer coupled to the first epitaxial layer. The electronic device further includes a first contact in electrical contact with the substrate and a second contact in electrical contact with the second epitaxial layer. |
申请公布号 |
WO2015066596(A1) |
申请公布日期 |
2015.05.07 |
申请号 |
WO2014US63656 |
申请日期 |
2014.11.03 |
申请人 |
AVOGY, INC. |
发明人 |
KIZILYALLI, ISIK C.;BOUR, DAVID P.;PRUNTY, THOMAS R.;YE, GANGFENG |
分类号 |
H01L29/04;H01L21/20 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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