发明名称 OVERVOLTAGE PROTECTION CIRCUIT FOR A POWER SEMICONDUCTOR AND METHOD FOR PROTECTING A POWER SEMICONDUCTOR FROM OVERVOLTAGES
摘要 The invention relates to an overvoltage protection circuit (5) and a method for protecting a power semiconductor (31, 32) from over-voltages. For this purpose, a voltage applied across a power semiconductor switch is first converted to a lower voltage signal corresponding to the voltage applied to the power semiconductor switch by means of a resistance voltage divider. The reduced voltage signal is then evaluated by means of an overvoltage detector, such as a Zener or suppression diode, and the power semiconductor switch to be protected is activated if the response voltage of said diode is exceeded. By lowering the voltage level by means of a voltage divider, a Zener or suppression diode having a lower voltage level can be used for monitoring the overvolatage, said Zener or suppression diode having improved operating properties in comparison with corresponding diodes having a higher voltage level.
申请公布号 WO2015062902(A1) 申请公布日期 2015.05.07
申请号 WO2014EP72487 申请日期 2014.10.21
申请人 ROBERT BOSCH GMBH 发明人 PURCAREA, CALIN;FEUERSTACK, PETER
分类号 H03K17/082;H02M1/32 主分类号 H03K17/082
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