MOTHED FOR MANUFACTURING JUNCTION BARRIER SCHOTTKY DIODE AND JUNCTION BARRIER SCHOTTKY DIODE USING THE SAME

摘要

The present invention relates to a contact battier schottky diode and a manufacturing method thereof and, more specifically, to a contact battier schottky diode using schottky contact and a method thereof. The present invention provides the manufacturing method of the contact battier schottky diode comprising; a step of forming an n- epi layer on the top of an n+ substrate; a step of forming p+ contact barrier grid and a p+ floating field guard ring by injecting p type dopant into the - epi layer; a step of forming a cathode electrode on the lower side of the n+ substrate; a step of forming a passivation film capable of covering a part of an outermost contact barrier grid of the p+ contact barrier grid and the p+ floating field guard ring; a step of forming a trench inside the p+ contact barrier grid by etching the inner side of the p+ contact barrier grid to be penetrated; and a step of forming an anode electrode on the top of the n-epi layer. According to the present invention, ON characteristic of the contact battier schottky diode can be improved efficiently by the trench passing through the inner side of the p+ contact barrier grid.