Trench process and structure for backside contact solar cells with polysilicon doped regions

摘要

TRENCH PROCESS AND STRUCTURE FOR BACKSIDE CONTACT SOLAR CELLS WITH POLYSILICON DOPED REGIONS A solar cell, comprising: a doped silicon substrate (103) having a front side (105) configured to face the sun during normal operation and a backside (106) opposite the front side (105); a P-type doped region (101) and an N-type doped region (102), wherein the P-type doped region (101) and the N-type doped region (102) are physically separate in one location and touch each other forming a butting junction (727) in another location; a first dielectric layer (113) between the substrate (103) and the P-type doped region (101) and the N-type doped region (102); and a second dielectric layer (107) formed over the P-type doped region (101) and the N-type doped region (102).